3-1 tm file number 3076.10 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000 HFA3046, hfa3096, hfa3127, hfa3128 ultra high frequency transistor arrays the HFA3046, hfa3096, hfa3127 and the hfa3128 are ultra high frequency transistor arrays that are fabricated from intersil corporation s complementary bipolar uhf-1 process. each array consists of ?e dielectrically isolated transistors on a common monolithic substrate. the npn transistors exhibit a f t of 8ghz while the pnp transistors provide a f t of 5.5ghz. both types exhibit low noise (3.5db), making them ideal for high frequency ampli?r and mixer applications. the HFA3046 and hfa3127 are all npn arrays while the hfa3128 has all pnp transistors. the hfa3096 is an npn- pnp combination. access is provided to each of the terminals for the individual transistors for maximum application ?xibility. monolithic construction of these transistor arrays provides close electrical and thermal matching of the ?e transistors. for pspice models, please request answerfax document number 663046. intersil also provides an application note illustrating the use of these devices as rf ampli?rs (request answerfax document 99315). features npn transistor (f t ) . . . . . . . . . . . . . . . . . . . . . . . . . . 8ghz npn current gain (h fe ). . . . . . . . . . . . . . . . . . . . . . . 130 npn early voltage (v a ) . . . . . . . . . . . . . . . . . . . . . . . 50v pnp transistor (f t ) . . . . . . . . . . . . . . . . . . . . . . . . 5.5ghz pnp current gain (h fe ) . . . . . . . . . . . . . . . . . . . . . . . . 60 pnp early voltage (v a ) . . . . . . . . . . . . . . . . . . . . . . . 20v noise figure (50 ? ) at 1.0ghz . . . . . . . . . . . . . . . . . 3.5db collector to collector leakage . . . . . . . . . . . . . . . . . <1pa complete isolation between transistors pin compatible with industry standard 3xxx series arrays applications vhf/uhf ampli?rs vhf/uhf mixers if converters synchronous detectors ordering information part number temp. range ( o c) package pkg. no. HFA3046b -55 to 125 14 ld soic m14.15 hfa3096b -55 to 125 16 ld soic m16.15 hfa3127b -55 to 125 16 ld soic m16.15 hfa3128b -55 to 125 16 ld soic m16.15 pinouts HFA3046 top view hfa3096 top view hfa3127 top view hfa3128 top view 1 2 3 4 5 6 7 14 13 12 11 10 9 8 q 1 q 2 q 3 q 4 q 5 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 q 1 nc q 3 q 4 q 2 q 5 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 q 1 q 2 q 3 q 4 nc q 5 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 q 1 q 2 q 3 q 4 nc q 5 data sheet october 1998
3-2 absolute maximum ratings thermal information collector to emitter voltage (open base) . . . . . . . . . . . . . . . . . . 8v collector to base voltage (open emitter) . . . . . . . . . . . . . . . . . 12v emitter to base voltage (reverse bias). . . . . . . . . . . . . . . . . . . 5.5v collector current (100% duty cycle) . . . . . 18.5ma at t j = 150 o c 34ma at t j = 125 o c 37ma at t j = 110 o c peak collector current (any condition) . . . . . . . . . . . . . . . . . . 65ma operating information temperature range . . . . . . . . . . . . . . . . . . . . . . . . . -55 o c to 125 o c thermal resistance (typical, note 1) ja ( o c/w) 14 ld soic package . . . . . . . . . . . . . . . . . . . . . . . . 120 16 ld soic package . . . . . . . . . . . . . . . . . . . . . . . . 115 maximum power dissipation (any one transistor) . . . . . . . . 0.15w maximum junction temperature (die) . . . . . . . . . . . . . . . . . . . 175 o c maximum junction temperature (plastic package) . . . . . . . 150 o c maximum storage temperature range . . . . . . . . . . -65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . 300 o c (soic - lead tips only) caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. ja is measured with the component mounted on an evaluation pc board in free air. electrical speci?ations t a = 25 o c parameter test conditions die soic units min typ max min typ max dc npn characteristics collector to base breakdown voltage, v (br)cbo i c = 100 a, i e = 0 12 18 - 12 18 - v collector to emitter breakdown voltage, v (br)ceo i c = 100 a, i b = 0 8 12 - 8 12 - v collector to emitter breakdown voltage, v (br)ces i c = 100 a, base shorted to emitter 10 20 - 10 20 - v emitter to base breakdown voltage, v (br)ebo i e = 10 a, i c = 0 5.5 6 - 5.5 6 - v collector-cutoff-current, i ceo v ce = 6v, i b = 0 - 2 100 - 2 100 na collector-cutoff-current, i cbo v cb = 8v, i e = 0 - 0.1 10 - 0.1 10 na collector to emitter saturation voltage, v ce(sat) i c = 10ma, i b = 1ma - 0.3 0.5 - 0.3 0.5 v base to emitter voltage, v be i c = 10ma - 0.85 0.95 - 0.85 0.95 v dc forward-current transfer ratio, h fe i c = 10ma, v ce = 2v 40 130 - 40 130 - early voltage, v a i c = 1ma, v ce = 3.5v 20 50 - 20 50 - v base to emitter voltage drift i c = 10ma - -1.5 - - -1.5 - mv/ o c collector to collector leakage - 1 - - 1 - pa electrical speci?ations t a = 25 o c parameter test conditions die soic units min typ max min typ max dynamic npn characteristics noise figure f = 1.0ghz, v ce = 5v, i c = 5ma, z s = 50 ? - 3.5 - - 3.5 - db f t current gain-bandwidth product i c = 1ma, v ce = 5v - 5.5 - - 5.5 - ghz i c = 10ma, v ce = 5v - 8 - - 8 - ghz power gain-bandwidth product, f max i c = 10ma, v ce = 5v - 6 - - 2.5 - ghz HFA3046, hfa3096, hfa3127, hfa3128
3-3 base to emitter capacitance v be = -3v - 200 - - 500 - ff collector to base capacitance v cb = 3v - 200 - - 500 - ff electrical speci?ations t a = 25 o c (continued) parameter test conditions die soic units min typ max min typ max electrical speci?ations t a = 25 o c parameter test conditions die soic units min typ max min typ max dc pnp characteristics collector to base breakdown voltage, v (br)cbo i c = -100 a, i e = 0 10 15 - 10 15 - v collector to emitter breakdown voltage, v (br)ceo i c = -100 a, i b = 0 8 15 - 8 15 - v collector to emitter breakdown voltage, v (br)ces i c = -100 a, base shorted to emitter 10 15 - 10 15 - v emitter to base breakdown voltage, v (br)ebo i e = -10 a, i c = 0 4.5 5 - 4.5 5 - v collector cutoff current, i ceo v ce = -6v, i b = 0 - 2 100 - 2 100 na collector cutoff current, i cbo v cb = -8v, i e = 0 - 0.1 10 - 0.1 10 na collector to emitter saturation voltage, v ce(sat) i c = -10ma, i b = -1ma - 0.3 0.5 - 0.3 0.5 v base to emitter voltage, v be i c = -10ma - 0.85 0.95 - 0.85 0.95 v dc forward-current transfer ratio, h fe i c = -10ma, v ce = -2v 20 60 - 20 60 - early voltage, v a i c = -1ma, v ce = -3.5v 10 20 - 10 20 - v base to emitter voltage drift i c = -10ma - -1.5 - - -1.5 - mv/ o c collector to collector leakage - 1 - - 1 - pa electrical speci?ations t a = 25 o c parameter test conditions die soic units min typ max min typ max dynamic pnp characteristics noise figure f = 1.0ghz, v ce = -5v, i c = -5ma, z s = 50 ? - 3.5 - - 3.5 - db f t current gain-bandwidth product i c = -1ma, v ce = -5v - 2 - - 2 - ghz i c = -10ma, v ce = -5v - 5.5 - - 5.5 - ghz power gain-bandwidth product i c = -10ma, v ce = -5v - 3 - - 2 - ghz base to emitter capacitance v be = 3v - 200 - - 500 - ff collector to base capacitance v cb = -3v - 300 - - 600 - ff HFA3046, hfa3096, hfa3127, hfa3128
3-4 differential pair matching characteristics for the HFA3046 input offset voltage i c = 10ma, v ce = 5v - 1.5 5.0 - 1.5 5.0 mv input offset current i c = 10ma, v ce = 5v - 5 25 - 5 25 a input offset voltage tc i c = 10ma, v ce = 5v - 0.5 - - 0.5 - v/ o c s-parameter and pspice model data is available from intersil sales of?es, and intersil corporation s web site. electrical speci?ations t a = 25 o c (continued) parameter test conditions die soic units min typ max min typ max common emitter s-parameters of npn 3 m x 50 m transistor freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 | phase(s 22 ) v ce = 5v and i c = 5ma 1.0e+08 0.83 -11.78 11.07 168.57 1.41e-02 78.88 0.97 -11.05 2.0e+08 0.79 -22.82 10.51 157.89 2.69e-02 68.63 0.93 -21.35 3.0e+08 0.73 -32.64 9.75 148.44 3.75e-02 59.58 0.86 -30.44 4.0e+08 0.67 -41.08 8.91 140.36 4.57e-02 51.90 0.79 -38.16 5.0e+08 0.61 -48.23 8.10 133.56 5.19e-02 45.50 0.73 -44.59 6.0e+08 0.55 -54.27 7.35 127.88 5.65e-02 40.21 0.67 -49.93 7.0e+08 0.50 -59.41 6.69 123.10 6.00e-02 35.82 0.62 -54.37 8.0e+08 0.46 -63.81 6.11 119.04 6.27e-02 32.15 0.57 -58.10 9.0e+08 0.42 -67.63 5.61 115.57 6.47e-02 29.07 0.53 -61.25 1.0e+09 0.39 -70.98 5.17 112.55 6.63e-02 26.45 0.50 -63.96 1.1e+09 0.36 -73.95 4.79 109.91 6.75e-02 24.19 0.47 -66.31 1.2e+09 0.34 -76.62 4.45 107.57 6.85e-02 22.24 0.45 -68.37 1.3e+09 0.32 -79.04 4.15 105.47 6.93e-02 20.53 0.43 -70.19 1.4e+09 0.30 -81.25 3.89 103.57 7.00e-02 19.02 0.41 -71.83 1.5e+09 0.28 -83.28 3.66 101.84 7.05e-02 17.69 0.40 -73.31 1.6e+09 0.27 -85.17 3.45 100.26 7.10e-02 16.49 0.39 -74.66 1.7e+09 0.25 -86.92 3.27 98.79 7.13e-02 15.41 0.38 -75.90 1.8e+09 0.24 -88.57 3.10 97.43 7.17e-02 14.43 0.37 -77.05 1.9e+09 0.23 -90.12 2.94 96.15 7.19e-02 13.54 0.36 -78.12 2.0e+09 0.22 -91.59 2.80 94.95 7.21e-02 12.73 0.35 -79.13 2.1e+09 0.21 -92.98 2.68 93.81 7.23e-02 11.98 0.35 -80.09 2.2e+09 0.20 -94.30 2.56 92.73 7.25e-02 11.29 0.34 -80.99 2.3e+09 0.20 -95.57 2.45 91.70 7.27e-02 10.64 0.34 -81.85 2.4e+09 0.19 -96.78 2.35 90.72 7.28e-02 10.05 0.33 -82.68 2.5e+09 0.18 -97.93 2.26 89.78 7.29e-02 9.49 0.33 -83.47 2.6e+09 0.18 -99.05 2.18 88.87 7.30e-02 8.96 0.33 -84.23 2.7e+09 0.17 -100.12 2.10 88.00 7.31e-02 8.47 0.33 -84.97 2.8e+09 0.17 -101.15 2.02 87.15 7.31e-02 8.01 0.33 -85.68 2.9e+09 0.16 -102.15 1.96 86.33 7.32e-02 7.57 0.33 -86.37 HFA3046, hfa3096, hfa3127, hfa3128
3-5 3.0e+09 0.16 -103.11 1.89 85.54 7.32e-02 7.16 0.33 -87.05 v ce = 5v and i c = 10ma 1.0e+08 0.72 -16.43 15.12 165.22 1.27e-02 75.41 0.95 -14.26 2.0e+08 0.67 -31.26 13.90 152.04 2.34e-02 62.89 0.88 -26.95 3.0e+08 0.60 -43.76 12.39 141.18 3.13e-02 52.58 0.79 -37.31 4.0e+08 0.53 -54.00 10.92 132.57 3.68e-02 44.50 0.70 -45.45 5.0e+08 0.47 -62.38 9.62 125.78 4.05e-02 38.23 0.63 -51.77 6.0e+08 0.42 -69.35 8.53 120.37 4.31e-02 33.34 0.57 -56.72 7.0e+08 0.37 -75.26 7.62 116.00 4.49e-02 29.47 0.51 -60.65 8.0e+08 0.34 -80.36 6.86 112.39 4.63e-02 26.37 0.47 -63.85 9.0e+08 0.31 -84.84 6.22 109.36 4.72e-02 23.84 0.44 -66.49 1.0e+09 0.29 -88.83 5.69 106.77 4.80e-02 21.75 0.41 -68.71 1.1e+09 0.27 -92.44 5.23 104.51 4.86e-02 20.00 0.39 -70.62 1.2e+09 0.25 -95.73 4.83 102.53 4.90e-02 18.52 0.37 -72.28 1.3e+09 0.24 -98.75 4.49 100.75 4.94e-02 17.25 0.35 -73.76 1.4e+09 0.22 -101.55 4.19 99.16 4.97e-02 16.15 0.34 -75.08 1.5e+09 0.21 -104.15 3.93 97.70 4.99e-02 15.19 0.33 -76.28 1.6e+09 0.20 -106.57 3.70 96.36 5.01e-02 14.34 0.32 -77.38 1.7e+09 0.20 -108.85 3.49 95.12 5.03e-02 13.60 0.31 -78.41 1.8e+09 0.19 -110.98 3.30 93.96 5.05e-02 12.94 0.31 -79.37 1.9e+09 0.18 -113.00 3.13 92.87 5.06e-02 12.34 0.30 -80.27 2.0e+09 0.18 -114.90 2.98 91.85 5.07e-02 11.81 0.30 -81.13 2.1e+09 0.17 -116.69 2.84 90.87 5.08e-02 11.33 0.30 -81.95 2.2e+09 0.17 -118.39 2.72 89.94 5.09e-02 10.89 0.29 -82.74 2.3e+09 0.16 -120.01 2.60 89.06 5.10e-02 10.50 0.29 -83.50 2.4e+09 0.16 -121.54 2.49 88.21 5.11e-02 10.13 0.29 -84.24 2.5e+09 0.16 -122.99 2.39 87.39 5.12e-02 9.80 0.29 -84.95 2.6e+09 0.15 -124.37 2.30 86.60 5.12e-02 9.49 0.29 -85.64 2.7e+09 0.15 -125.69 2.22 85.83 5.13e-02 9.21 0.29 -86.32 2.8e+09 0.15 -126.94 2.14 85.09 5.13e-02 8.95 0.29 -86.98 2.9e+09 0.15 -128.14 2.06 84.36 5.14e-02 8.71 0.29 -87.62 3.0e+09 0.14 -129.27 1.99 83.66 5.15e-02 8.49 0.29 -88.25 common emitter s-parameters of pnp 3 m x 50 m transistor freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 | phase(s 22 ) v ce = -5v and i c = -5ma 1.0e+08 0.72 -16.65 10.11 166.77 1.66e-02 77.18 0.96 -10.76 2.0e+08 0.68 -32.12 9.44 154.69 3.10e-02 65.94 0.90 -20.38 3.0e+08 0.62 -45.73 8.57 144.40 4.23e-02 56.39 0.82 -28.25 4.0e+08 0.57 -57.39 7.68 135.95 5.05e-02 48.66 0.74 -34.31 common emitter s-parameters of npn 3 m x 50 m transistor (continued) freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 | phase(s 22 ) HFA3046, hfa3096, hfa3127, hfa3128
3-6 5.0e+08 0.52 -67.32 6.86 129.11 5.64e-02 42.52 0.67 -38.81 6.0e+08 0.47 -75.83 6.14 123.55 6.07e-02 37.66 0.61 -42.10 7.0e+08 0.43 -83.18 5.53 118.98 6.37e-02 33.79 0.55 -44.47 8.0e+08 0.40 -89.60 5.01 115.17 6.60e-02 30.67 0.51 -46.15 9.0e+08 0.38 -95.26 4.56 111.94 6.77e-02 28.14 0.47 -47.33 1.0e+09 0.36 -100.29 4.18 109.17 6.91e-02 26.06 0.44 -48.15 1.1e+09 0.34 -104.80 3.86 106.76 7.01e-02 24.33 0.41 -48.69 1.2e+09 0.33 -108.86 3.58 104.63 7.09e-02 22.89 0.39 -49.05 1.3e+09 0.32 -112.53 3.33 102.72 7.16e-02 21.67 0.37 -49.26 1.4e+09 0.30 -115.86 3.12 101.01 7.22e-02 20.64 0.36 -49.38 1.5e+09 0.30 -118.90 2.92 99.44 7.27e-02 19.76 0.34 -49.43 1.6e+09 0.29 -121.69 2.75 98.01 7.32e-02 19.00 0.33 -49.44 1.7e+09 0.28 -124.24 2.60 96.68 7.35e-02 18.35 0.32 -49.43 1.8e+09 0.28 -126.59 2.47 95.44 7.39e-02 17.79 0.31 -49.40 1.9e+09 0.27 -128.76 2.34 94.29 7.42e-02 17.30 0.30 -49.38 2.0e+09 0.27 -130.77 2.23 93.19 7.45e-02 16.88 0.30 -49.36 2.1e+09 0.26 -132.63 2.13 92.16 7.47e-02 16.52 0.29 -49.35 2.2e+09 0.26 -134.35 2.04 91.18 7.50e-02 16.20 0.28 -49.35 2.3e+09 0.26 -135.96 1.95 90.24 7.52e-02 15.92 0.28 -49.38 2.4e+09 0.25 -137.46 1.87 89.34 7.55e-02 15.68 0.28 -49.42 2.5e+09 0.25 -138.86 1.80 88.48 7.57e-02 15.48 0.27 -49.49 2.6e+09 0.25 -140.17 1.73 87.65 7.59e-02 15.30 0.27 -49.56 2.7e+09 0.25 -141.39 1.67 86.85 7.61e-02 15.15 0.26 -49.67 2.8e+09 0.25 -142.54 1.61 86.07 7.63e-02 15.01 0.26 -49.81 2.9e+09 0.24 -143.62 1.56 85.31 7.65e-02 14.90 0.26 -49.96 3.0e+09 0.24 -144.64 1.51 84.58 7.67e-02 14.81 0.26 -50.13 v ce = -5v, i c = -10ma 1.0e+08 0.58 -23.24 13.03 163.45 1.43e-02 73.38 0.93 -13.46 2.0e+08 0.53 -44.07 11.75 149.11 2.58e-02 60.43 0.85 -24.76 3.0e+08 0.48 -61.50 10.25 137.78 3.38e-02 50.16 0.74 -33.10 4.0e+08 0.43 -75.73 8.88 129.12 3.90e-02 42.49 0.65 -38.83 5.0e+08 0.40 -87.36 7.72 122.49 4.25e-02 36.81 0.58 -42.63 6.0e+08 0.37 -96.94 6.78 117.33 4.48e-02 32.59 0.51 -45.07 7.0e+08 0.35 -104.92 6.01 113.22 4.64e-02 29.39 0.47 -46.60 8.0e+08 0.33 -111.64 5.39 109.85 4.76e-02 26.94 0.43 -47.49 9.0e+08 0.32 -117.36 4.87 107.05 4.85e-02 25.04 0.40 -47.97 1.0e+09 0.31 -122.27 4.44 104.66 4.92e-02 23.55 0.37 -48.18 1.1e+09 0.30 -126.51 4.07 102.59 4.97e-02 22.37 0.35 -48.20 common emitter s-parameters of pnp 3 m x 50 m transistor (continued) freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 | phase(s 22 ) HFA3046, hfa3096, hfa3127, hfa3128
3-7 1.2e+09 0.30 -130.21 3.76 100.76 5.02e-02 21.44 0.33 -48.11 1.3e+09 0.29 -133.46 3.49 99.14 5.06e-02 20.70 0.32 -47.95 1.4e+09 0.29 -136.33 3.25 97.67 5.09e-02 20.11 0.31 -47.77 1.5e+09 0.28 -138.89 3.05 96.33 5.12e-02 19.65 0.30 -47.58 1.6e+09 0.28 -141.17 2.87 95.10 5.15e-02 19.29 0.29 -47.39 1.7e+09 0.28 -143.21 2.70 93.96 5.18e-02 19.01 0.28 -47.23 1.8e+09 0.28 -145.06 2.56 92.90 5.21e-02 18.80 0.27 -47.09 1.9e+09 0.27 -146.73 2.43 91.90 5.23e-02 18.65 0.27 -46.98 2.0e+09 0.27 -148.26 2.31 90.95 5.26e-02 18.55 0.26 -46.91 2.1e+09 0.27 -149.65 2.20 90.05 5.28e-02 18.49 0.26 -46.87 2.2e+09 0.27 -150.92 2.10 89.20 5.30e-02 18.46 0.25 -46.87 2.3e+09 0.27 -152.10 2.01 88.37 5.33e-02 18.47 0.25 -46.90 2.4e+09 0.27 -153.18 1.93 87.59 5.35e-02 18.50 0.25 -46.97 2.5e+09 0.27 -154.17 1.86 86.82 5.38e-02 18.55 0.24 -47.07 2.6e+09 0.26 -155.10 1.79 86.09 5.40e-02 18.62 0.24 -47.18 2.7e+09 0.26 -155.96 1.72 85.38 5.42e-02 18.71 0.24 -47.34 2.8e+09 0.26 -156.76 1.66 84.68 5.45e-02 18.80 0.24 -47.55 2.9e+09 0.26 -157.51 1.60 84.01 5.47e-02 18.91 0.24 -47.76 3.0e+09 0.26 -158.21 1.55 83.35 5.50e-02 19.03 0.23 -48.00 common emitter s-parameters of pnp 3 m x 50 m transistor (continued) freq. (hz) |s 11 | phase(s 11 )|s 21 | phase(s 21 )|s 12 | phase(s 12 )|s 22 | phase(s 22 ) typical performance curves figure 1. npn collector current vs collector to emitter voltage figure 2. npn collector current and base current vs base to emitter voltage i b = 200 a collector to emitter voltage (v) i b = 160 a i b =120 a i b = 80 a i b = 40 a 12345 0 25 20 15 10 5 collector current (ma) i b base to emitter voltage (v) v ce = 3v 0.6 0.7 0.8 0.9 1.0 100m 10m 1m 100 collector current i c 0.5 10 1 100n 10n 1n and base current (a) HFA3046, hfa3096, hfa3127, hfa3128
3-8 figure 3. npn dc current gain vs collector current figure 4. npn gain bandwidth product vs collector current (uhf 3 x 50 with bond pads) figure 5. pnp collector current vs collector to emitter voltage figure 6. pnp collector current and base current vs base to emitter voltage figure 7. pnp dc current gain vs collector current figure 8. pnp gain bandwidth product vs collector current (uhf 3 x 50 with bond pads) typical performance curves (continued) collector current (a) v ce = 3v 160 140 120 dc current gain 1 100 80 60 40 20 0 10 100 1m 10m 100m collector current (ma) v ce = 1v 1.0 10 100 10.0 8.0 6.0 gain bandwidth product (ghz) 0.1 v ce = 5v v ce = 3v 4.0 2.0 0 i b = -400 a collector to emitter voltage (v) i b = -80 a -1 -2 -3 -4 -5 0 -25 -20 -15 -10 -5 collector current (ma) 0 i b = -320 a i b = -240 a i b = -160 a base to emitter voltage (v) i b v ce = -3v -0.6 -0.7 -0.8 -0.9 -1.0 -100m -10m -1m -100 collector current i c -0.5 -10 -1 -100n -10n -1n and base current (a) collector current (a) 160 140 120 dc current gain -1 100 80 60 40 20 0 -10 -100 -1m -10m -100m v ce = -3v collector current (ma) v ce = -5v 5.0 gain bandwidth product (ghz) 4.0 3.0 2.0 1.0 -0.1 -1.0 -10 -100 v ce = -3v v ce = -1v HFA3046, hfa3096, hfa3127, hfa3128
3-9 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com die characteristics die dimensions: 53 mils x 52 mils x 19 mils 1340 m x 1320 m x 483 m metallization: type: metal 1: alcu(2%)/tiw thickness: metal 1: 8k ? 0.4k ? type: metal 2: alcu(2%) thickness: metal 2: 16k ? 0.8k ? passivation: type: nitride thickness: 4k ? 0.5k ? process: uhf-1 substrate potential: (powered up) unbiased metallization mask layout hfa3096, hfa3127, hfa3128 HFA3046 pad numbers correspond to soic pinout. 1 2 3 4 5 6 78 910 11 12 13 14 15 16 1320 m (52 mils) 1340 m (53 mils) 1 2 3 4 5 6 78 9 10 11 12 13 14 1320 m (52 mils) 1340 m (53 mils) HFA3046, hfa3096, hfa3127, hfa3128
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